IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Abstract
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
Look inside
Additional information
| Publication type | International Standard |
|---|---|
| Publication date | 2019-11-13 |
| Edition | 3.0 |
| Available language(s) | English/French |
| TC/SC | TC 47/SC 47E - Discrete semiconductor devicesrss |
| ICS | 31.080.01 - Semiconductor devices in general 31.080.30 - Transistors |
| Stability date | 2029 |
| Pages | 160 |
| File size | 4228 KB |
The following test report forms are related:
Share your publications
Learn how to share your publications with your colleagues, using networking options.
Payment information
Our prices are in Swiss francs (CHF). We accept all major credit cards (American Express, Mastercard and Visa, JCB and CUP), PayPal and bank transfers as form of payment.
Keep in touch
Keep up to date with new publication releases and announcements with our free IEC Just Published email newsletter.
Contact customer services
Please send your enquiry by email or call us on +41 22 919 02 11 between 09:00 – 16:00 CET Monday to Friday.