International Electrotechnical Commission

Publication detail

Reference	IEC 62417 ed1.0 withdrawn corrigendum	> preview
Title	Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Publication date	2010-04-22
Format, price (Swiss francs) and language	30.- 16 pages 30.- 914 Kb
Abstract	IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
Technical Committee	47 - Semiconductor devices
ICS Codes	31.080 Semiconductor devices *Semiconducting materials, see 29.045
Replaced by
Stability date	2015
Work in progress	Project Stage code Forecast publication date No project under development - -

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