IEC > Webstore > Search > Register > Check out > Payment > Order confirmation

Publication detail

Reference IEC 62417 ed1.0 withdrawn corrigendum
> preview
Title Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Publication date 2010-04-22
Format, price
(Swiss francs)
and language
30.- 16 pages
30.- 914 Kb
Abstract IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
Technical Committee 47 - Semiconductor devices  RSS
ICS Codes
31.080 Semiconductor devices
*Semiconducting materials, see 29.045
Replaced by
Stability date 2015
Work in progress
ProjectStage codeForecast publication date
No project under development--


>> Advanced search

Quick access by ref. number


Your basket is empty
Your country is :
Your TVA is : You must login...


Accepted credit cards:
Prices in CHF (Swiss francs)
Request a pro forma to pay by bank transfer or cheque
Learn how to share your publications with your colleagues, using networking options
Prices in CHF (Swiss francs)
We accept the following credit cards:
To pay by bank transfer: request a pro forma
If you purchase regularly through the IEC Webstore you can open a corporate account

Just Published

>> Published in the last 30 days


  1. IEC 60601-1-2 Ed. 4.0
  2. IEC 61010-1 Ed. 3.0
  3. IEC 60601-1 Ed. 3.1
  4. IEC 61000-4-5 Ed. 3.0
  5. IEC 61000-4-2 Ed. 2.0
  6. IEC 60079-0 Ed. 6.0
  7. IEC 62366-1 Ed. 1.0
  8. IEC 61508-3 Ed. 2.0
  9. IEC 60060-1 Ed. 3.0
  10. IEC 60079-14 Ed. 5.0