Publication detail
| Reference | IEC 60747-8 ed3.0 |
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| Title | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors | |||||||||
| Publication date | 2010-12-15 | |||||||||
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| Abstract | IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006. |
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| Technical Committee | 47E - Discrete semiconductor devices
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| Stability date | 2015 | |||||||||
| Work in progress |
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