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Reference IEC 60747-8 ed3.0 withdrawn corrigendum
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Title Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Publication date 2010-12-15
Format, price
(Swiss francs)
and language
290.- 155 pages
290.- 1973 Kb
Abstract IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.
Technical Committee 47E - Discrete semiconductor devices  RSS
ICS Codes
31.080.30 Transistors
Replaced by
Stability date 2018
Work in progress
ProjectStage codeForecast publication date
No project under development--


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