Publication detail
| Reference | IEC 60747-7 ed3.0 |
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| Title | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors | |||||||||
| Publication date | 2010-12-16 | |||||||||
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| Abstract | IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding switching, high-frequency, and microwave applications); - High-frequency power transistors for amplifier and oscillator applications; - Switching transistors for high speed switching and power switching applications; - Resistor biased transistors. The main changes with respect to previous edition are listed below. a) Clause 1 was amended by adding an item that should be included. b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included. c) The text of the second edition was combined with that of IEC 60747-7-5. This publication is to be read in conjunction with IEC 60747-1:2006. |
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| Technical Committee | 47E - Discrete semiconductor devices
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| Stability date | 2015 | |||||||||
| Work in progress |
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