International Electrotechnical Commission

Publication detail

Reference	IEC 62047-9 ed1.0 withdrawn corrigendum	> preview
Title	Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
Publication date	2011-07-13
Format, price (Swiss francs) and language	150.- 49 pages 150.- 1450 Kb
Abstract	IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
Technical Committee	47F - Micro-electromechanical systems
ICS Codes	31.080.99 Other semiconductor devices
Replaced by
Stability date	2015
Work in progress	Project Stage code Forecast publication date No project under development - -

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