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Reference IEC 62047-9 ed1.0 withdrawn corrigendum
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Title Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
Publication date 2011-07-13
Format, price
(Swiss francs)
and language
150.- 49 pages
150.- 1450 Kb
 
Abstract IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
Technical Committee 47F - Micro-electromechanical systems  RSS
ICS Codes
31.080.99 Other semiconductor devices
 
Replaced by
Stability date 2015
 
Work in progress
ProjectStage codeForecast publication date
No project under development--


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