IEC 63011-3
IEC 63011-3:2018
Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
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Technical committee
TC 47/SC 47A Integrated circuits| Publication type | International Standard |
| Publication date | 2018-11-28 |
| Edition | 1.0 |
| ICS | 31.200 |
| Stability date | 2029 |
| ISBN number | 9782832262764 |
| Pages | 28 |
| File size | 2.53 MB |
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