IEC 60747-9
IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.
This third edition includes the following significant technical changes with respect to the previous edition:
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.
CHFÂ 380.-
Technical committee
TC 47/SC 47E Discrete semiconductor devices| Publication type | International Standard |
| Publication date | 2019-11-13 |
| Edition | 3.0 |
| ICS | 31.080.01 31.080.30 |
| Stability date | 2029 |
| ISBN number | 9782832275306 |
| Pages | 160 |
| File size | 4.03 MB |
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