Consolidated version
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IEC 60747-8:2010+AMD1:2021 CSV
IEC 60747-8
IEC 60747-8:2010
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
CHFÂ 365.-
Consolidated version
The content of amendment(s) is incorporated into the publication. The track changes mode shows where the publication has been modified by the amendment.
DiscoverTechnical committee
TC 47/SC 47E Discrete semiconductor devices| Publication type | International Standard |
| Publication date | 2010-12-15 |
| Edition | 3.0 |
| ICS | 31.080.30 |
| Stability date | 2026 |
| ISBN number | 9782889122790 |
| Pages | 155 |
| File size | 1.88 MB |
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