IEC 62047-16:2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
Abstract
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
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Additional information
| Publication type | International Standard |
|---|---|
| Publication date | 2015-03-05 |
| Edition | 1.0 |
| Available language(s) | English/French |
| TC/SC | TC 47/SC 47F - Micro-electromechanical systemsrss |
| ICS | 31.080.99 - Other semiconductor devices |
| Stability date | 2027 |
| Pages | 21 |
| File size | 1245 KB |
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