Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- Corrections of Euler angle indications in Table 1 and axis directions in Figure 3.
- Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition.
- Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.
|Publication type||International Standard|
|Available language(s)||English, English/French|
|TC/SC||TC 49 - Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detectionrss|
|ICS||31.140 - Piezoelectric devices|
|File size||2073 KB|
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