IEC 63011-3:2018 

Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via


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IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.

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Additional information

Publication typeInternational Standard
Publication date2018-11-28
Available language(s)English/French
TC/SCTC 47/SC 47A - Integrated circuitsrss
ICS31.200 - Integrated circuits. Microelectronics
Stability date  2029
File size2648 KB

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