IEC 63011-3:2018
Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via
Abstract
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Additional information
Publication type | International Standard |
---|---|
Publication date | 2018-11-28 |
Edition | 1.0 |
Available language(s) | English/French |
TC/SC | TC 47/SC 47A - Integrated circuitsrss |
ICS | 31.200 - Integrated circuits. Microelectronics |
Stability date | 2029 |
Pages | 28 |
File size | 2648 KB |
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