IEC 63068-1:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Abstract
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
Additional information
Publication type | International Standard |
---|---|
Publication date | 2019-01-30 |
Edition | 1.0 |
Available language(s) | English |
TC/SC | TC 47 - Semiconductor devicesrss |
ICS | 31.080.99 - Other semiconductor devices |
Stability date | 2025 |
Pages | 23 |
File size | 5866 KB |
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