IEC 63068-1
IEC 63068-1:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
CHFÂ 155.-
Technical committee
TC 47 Semiconductor devices| Publication type | International Standard |
| Publication date | 2019-01-30 |
| Edition | 1.0 |
| ICS | 31.080.99 |
| Stability date | 2031 |
| ISBN number | 9782832264799 |
| Pages | 23 |
| File size | 5.59 MB |
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation