IEC 63068-1:2019 

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects


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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.


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Additional information

Publication typeInternational Standard
Publication date2019-01-30
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.99 - Other semiconductor devices
Stability date  2021
File size5866 KB

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