IEC 62979:2017
Photovoltaic modules - Bypass diode - Thermal runaway test
Abstract
IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Additional information
Publication type | International Standard |
---|---|
Publication date | 2017-08-10 |
Edition | 1.0 |
Available language(s) | English, English/French |
TC/SC | TC 82 - Solar photovoltaic energy systemsrss |
ICS | 27.160 - Solar energy engineering |
Stability date | 2026 |
Pages | 25 |
File size | 1428 KB |
The following test report forms are related:
Share your publications
Learn how to share your publications with your colleagues, using networking options.
Payment information
Our prices are in Swiss francs (CHF). We accept all major credit cards (American Express, Mastercard and Visa, JCB and CUP), PayPal and bank transfers as form of payment.
Keep in touch
Keep up to date with new publication releases and announcements with our free IEC Just Published email newsletter.
Contact customer services
Please send your enquiry by email or call us on +41 22 919 02 11 between 09:00 – 16:00 CET Monday to Friday.