IEC 62979:2017 

Photovoltaic modules - Bypass diode - Thermal runaway test

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Abstract

IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

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Additional information

Publication typeInternational Standard
Publication date2017-08-10
Edition1.0
Available language(s)English
TC/SCTC 82 - Solar photovoltaic energy systemsrss
ICS27.160 - Solar energy engineering
Stability date  2019
Pages13
File size1342 KB

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