IEC 62880-1:2017 

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard

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Abstract

IECĀ 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

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Additional information

Publication typeInternational Standard
Publication date2017-08-23
Edition1.0
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.01 - Semiconductor devices in general
Stability date  2022
Pages24
File size1857 KB

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