IEC 60747-8:2010 

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Note: a more recent version of this publication exists
IEC 60747-8:2010+AMD1:2021 CSV


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IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.

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Additional information

Publication typeInternational Standard
Publication date2010-12-15
Available language(s)English/French
TC/SCTC 47/SC 47E - Discrete semiconductor devicesrss
ICS31.080.30 - Transistors
Stability date  2026
File size1973 KB

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