IEC 60747-9:2007 

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

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Abstract

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

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Additional information

Publication typeInternational Standard
Publication date2007-09-26
Edition2.0
Available language(s)English/French
TC/SCTC 47/SC 47E - Discrete semiconductor devicesrss
ICS31.080.30 - Transistors
31.080.01 - Semiconductor devices in general
Stability date  2019
Pages117
File size1587 KB

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