IEC 60749-6:2016 PRV 
Pre release version

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

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Abstract

This Final Draft International Standard is an up to 6 weeks' pre-release of the official publication. It is available for sale during its voting period: 2016-12-23 to 2017-02-03. By purchasing this FDIS now, you will automatically receive, in addition, the final publication.

IEC 60749-6 Ed.2.0(E) is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated.
Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.

This edition includes the following significant technical changes with respect to the previous edition:
a)   additional test conditions;
b)   clarification of the applicability of test conditions.

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Additional information

Publication typeInternational Standard
Publication date2016-12-23
Edition2.0
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.01 - Semiconductor devices in general
Stability date2022
Hardcopy8  pages
File size934 KB

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