IEC 62373-1:2020
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
Abstract
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
This document also defines the terms pertaining to the conventional BTI test method.
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Additional information
| Publication type | International Standard |
|---|---|
| Publication date | 2020-07-15 |
| Edition | 1.0 |
| Available language(s) | English/French |
| TC/SC | TC 47 - Semiconductor devicesrss |
| ICS | 31.080.30 - Transistors |
| Stability date | 2025 |
| Pages | 44 |
| File size | 1755 KB |
The following test report forms are related:
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