IEC 63068-2
IEC 63068-2:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
CHFÂ 155.-
Technical committee
TC 47 Semiconductor devices| Publication type | International Standard |
| Publication date | 2019-01-30 |
| Edition | 1.0 |
| ICS | 31.080.99 |
| Stability date | 2031 |
| ISBN number | 9782832264805 |
| Pages | 25 |
| File size | 3.00 MB |
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