IEC 63068-2:2019 

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

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Abstract

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

 

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Additional information

Publication typeInternational Standard
Publication date2019-01-30
Edition1.0
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.99 - Other semiconductor devices
Stability date  2021
Pages25
File size3148 KB

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