IEC 63068-3:2020 

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

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Abstract

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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Additional information

Publication typeInternational Standard
Publication date2020-07-13
Edition1.0
Available language(s)English/French
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.99 - Other semiconductor devices
Stability date  2026
Pages51
File size2577 KB

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