IEC 63068-3
IEC 63068-3:2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
CHFÂ 200.-
Technical committee
TC 47 Semiconductor devicesCategory
Quality Assurance| Publication type | International Standard |
| Publication date | 2020-07-13 |
| Edition | 1.0 |
| ICS | 31.080.99 |
| Stability date | 2027 |
| ISBN number | 9782832286142 |
| Pages | 51 |
| File size | 2.46 MB |
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