IEC 63068-3:2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
Abstract
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
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Additional information
| Publication type | International Standard |
|---|---|
| Publication date | 2020-07-13 |
| Edition | 1.0 |
| Available language(s) | English/French |
| TC/SC | TC 47 - Semiconductor devicesrss |
| ICS | 31.080.99 - Other semiconductor devices |
| Stability date | 2027 |
| Pages | 51 |
| File size | 2577 KB |
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