IEC 63229:2021 

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

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Abstract

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

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Additional information

Publication typeInternational Standard
Publication date2021-04-07
Edition1.0
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.99 - Other semiconductor devices
Stability date  2025
Pages21
File size2763 KB

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