IEC 62047-9:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
Abstract
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
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Additional information
| Publication type | International Standard |
|---|---|
| Publication date | 2011-07-13 |
| Edition | 1.0 |
| Available language(s) | English/French |
| TC/SC | TC 47/SC 47F - Micro-electromechanical systemsrss |
| ICS | 31.080.99 - Other semiconductor devices |
| Stability date | 2026 |
| Pages | 49 |
| File size | 1450 KB |
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