IEC 63011-3:2018 PRV
Pre release version
Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC. Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
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