IEC 62047-31:2019 PRV 
Pre release version

Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

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Abstract

This Final Draft International Standard is an up to 6 weeks' pre-release of the official publication. It is available for sale during its voting period: 2019-01-25 to 2019-03-08. By purchasing this FDIS now, you will automatically receive, in addition, the final publication.

IEC 62047-31 ED1 specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

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Additional information

Publication typeInternational Standard
Publication date2019-01-25
Edition1.0
Available language(s)English
TC/SCTC 47/SC 47F - Micro-electromechanical systemsrss
ICS31.080.99 - Other semiconductor devices
Stability date  2024
Pages12
File size1118 KB

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