IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Abstract
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Additional information
Publication type | International Standard |
---|---|
Publication date | 2022-04-21 |
Edition | 1.0 |
Available language(s) | English/French |
TC/SC | TC 47 - Semiconductor devicesrss |
ICS | 31.080.30 - Transistors |
Stability date | 2026 |
Pages | 25 |
File size | 1027 KB |
The following test report forms are related:
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