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IEC 63284

IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
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English/French
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Technical committee

TC 47 Semiconductor devices

Category

Quality Assurance
Publication typeInternational Standard
Publication date2022-04-21
Edition1.0
ICS

31.080.30

Stability date2026
ISBN number9782832255414
Pages25
File size1002.74 KB
EditionDatePublicationEditionStatus

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