IEC 63275-1
IEC 63275-1:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
CHFÂ 80.-
Technical committee
TC 47 Semiconductor devicesCategory
Quality Assurance| Publication type | International Standard |
| Publication date | 2022-04-21 |
| Edition | 1.0 |
| ICS | 31.080.30 |
| Stability date | 2026 |
| ISBN number | 9782832255728 |
| Pages | 25 |
| File size | 1.14 MB |
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