IEC 63275-1:2022 

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

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Abstract

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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Additional information

Publication typeInternational Standard
Publication date2022-04-21
Edition1.0
Available language(s)English/French
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.30 - Transistors
Stability date  2026
Pages25
File size1163 KB

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