IEC 63275-2:2022 

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

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Abstract

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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Additional information

Publication typeInternational Standard
Publication date2022-05-11
Edition1.0
Available language(s)English/French
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.30 - Transistors
Stability date  2026
Pages20
File size921 KB

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