IEC 62373-1:2020 PRV 
Pre release version

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

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Abstract

This Final Draft International Standard is an up to 6 weeks' pre-release of the official publication. It is available for sale during its voting period: 2020-05-01 to 2020-06-12. By purchasing this FDIS now, you will automatically receive, in addition, the final publication.

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.

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Additional information

Publication typeInternational Standard
Publication date2020-05-01
Edition1.0
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.30 - Transistors
Stability date  2025
Pages22
File size1451 KB

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