IEC 63068-4:2022 

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

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Abstract

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

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Additional information

Publication typeInternational Standard
Publication date2022-07-27
Edition1.0
Available language(s)English
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.99 - Other semiconductor devices
Stability date  2026
Pages25
File size8284 KB

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