IEC 62417:2010 

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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Abstract

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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Additional information

Publication typeInternational Standard
Publication date2010-04-22
Edition1.0
Available language(s)English/French
TC/SCTC 47 - Semiconductor devicesrss
ICS31.080.30 - Transistors
Stability date  2025
Pages16
File size914 KB

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