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IEC 60747-9 Revised

IEC 60747-9:2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
The major changes with respect to the previous edition are mainly of an editorial nature.
BASE PUBLICATION
English/French
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A more recent version of this publication exists: IEC 60747-9:2019

Technical committee

TC 47/SC 47E Discrete semiconductor devices
Publication typeInternational Standard
Publication date2007-09-26
Edition2.0
ICS

31.080.30

31.080.01

Withdrawal date2019-11-13
ISBN number2831893216
Pages117
File size1.59 MB
EditionDatePublicationEditionStatus

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