IEC 60747-9:2019 PRV 
Pre release version

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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Abstract

This Final Draft International Standard is an up to 6 weeks' pre-release of the official publication. It is available for sale during its voting period: 2019-08-16 to 2019-09-27. By purchasing this FDIS now, you will automatically receive, in addition, the final publication.

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.

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Additional information

Publication typeInternational Standard
Publication date2019-08-16
Edition3.0
Available language(s)English/French
TC/SCTC 47/SC 47E - Discrete semiconductor devicesrss
ICS31.080.01 - Semiconductor devices in general
31.080.30 - Transistors
Stability date  2024
Pages160
File size4130 KB

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